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                       BAS16LD All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 12 October 2010 3 of 11 NXP Semiconductors BAS16LD Single high-speed switching diode 5. Limiting values [1] Device mounted on an FR4 PCB with 60 μm copper strip line. [2] Tj =25°C prior to surge. [3] Reflow soldering is the only recommended soldering method. 6. Thermal characteristics [1] Device mounted on an FR4 PCB with 60 μm copper strip line. [2] Reflow soldering is the only recommended soldering method. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage -100V VR reverse voltage - 100 V IF forward current [1] 215 mA IFRM repetitive peak forward current tp ≤ 0.5 μs; δ≤0.25 -500mA IFSM non-repetitive peak forward square wave current [2] tp =1μs-4A tp =1ms - 1 A tp =1s - 0.5 A Ptot total power dissipation Tamb ≤ 25 °C [1][3] -250mW Tj junction temperature - 150 °C Tamb ambient temperature ?55 +150 °C Tstg storage temperature ?65 +150 °C Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1][2] - - 500 K/W |